完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | 葉淑梅 | en_US |
| dc.contributor.author | Shu-Mei, Yeh | en_US |
| dc.contributor.author | 李威儀 | en_US |
| dc.contributor.author | Wee-Yi Lee | en_US |
| dc.date.accessioned | 2014-12-12T03:01:44Z | - |
| dc.date.available | 2014-12-12T03:01:44Z | - |
| dc.date.issued | 2006 | en_US |
| dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#GT009377502 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/80318 | - |
| dc.description.abstract | 利用金屬黏合及雷射剝離系統等製程的整合,將長於藍寶石基板的雷射結構轉移至砷化鎵或矽基板,藉由其立方晶格之基板特性,便於將雷射結構劈裂,形成雷射共振腔之劈裂鏡面。由於金屬黏合的品質會影響劈裂時的結果,故利用金屬,以及實驗黏合時調變其黏合參數之設定,以得到較佳的效果。 經由掃描式電子顯微鏡及原子力顯微鏡之量測數據,證明我們藉由數站製程之整合流程所得到之劈裂面, 其粗糙程度是小到足以作為雷射之共振腔之鏡面。 | zh_TW |
| dc.description.abstract | We integrated the metal bonding and laser lift off process, then transferred the GaN LD structure to the new substrate.By the new cubic substrate, we can cleave the LD structure into a rectangle easier. It is usful to get the mirror facet of laser diode. After we measue by AFM, the data of cleaved facet roughness is qualified to be a reflectivty mirror of lase diode. | en_US |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 劈裂 | zh_TW |
| dc.subject | 金屬黏合 | zh_TW |
| dc.subject | GaN | en_US |
| dc.subject | Cleave | en_US |
| dc.subject | metal bonding | en_US |
| dc.title | 利用金屬黏合及劈裂技術完成氮化鎵雷射二極體共振腔 | zh_TW |
| dc.title | Studying of GaN Edge Laser Emitting Diode Cavity by Metal Bonding and Cleaving Technology | en_US |
| dc.type | Thesis | en_US |
| dc.contributor.department | 理學院應用科技學程 | zh_TW |
| 顯示於類別: | 畢業論文 | |

