超薄閘極氧化層CMOS元件軟崩潰效應研究(I)

標題:	超薄閘極氧化層CMOS元件軟崩潰效應研究(I) In-Depth Study of Soft Breakdown Effects in Ultra-Thin Oxide CMOS (I)
作者:	汪大暉 WANG TAHUI 交通大學電子工程系
公開日期:	2002
官方說明文件#:	NSC91-2215-E009-049
URI:	http://hdl.handle.net/11536/92610 https://www.grb.gov.tw/search/planDetail?id=784421&docId=150775
Appears in Collections:	Research Plans

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