| 標題: | 具有新式副閘極結構的低溫複晶矽薄膜電晶體的製作與分析 Fabrication and Characterization of Low-Temperature Polysilicon Thin Film Transistors with Novel Self-Aligned Sub-Gate Structures |
| 作者: | 黃調元 TIAO-YUANHUANG 國立交通大學電子工程學系 |
| 公開日期: | 2000 |
| 官方說明文件#: | NSC89-2215-E009-104 |
| URI: | http://hdl.handle.net/11536/93860 https://www.grb.gov.tw/search/planDetail?id=583890&docId=109707 |
| Appears in Collections: | Research Plans |
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- A novel high-performance poly-silicon thin film transistor with a self-aligned thicker sub-gate oxide near the drain/source regions / Chang, KM;Chung, YH;Lin, GM;Lin, JH;Deng, CG
- Characterization of the novel polysilicon TFT with a subgate coupling structure / Chang, KM;Chung, YH;Deng, CG;Chung, YF;Lin, JH
- A novel vertical bottom-gate polysilicon thin film transistor with self-aligned offset / Lai, CS;Lee, CL;Lei, TF;Chern, HN
- Novel low-temperature polysilicon thin-film transistors with a self-aligned gate and raised source/drain formed by the damascene process / Chang, Kow Ming;Lin, Gin Min;Yang, Guo Liang
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