| 標題: | 蕭特基能障金氧半電晶體元件研製與理論分析---總計畫 Fabrication, Characterization, and Theoretical Analysis on Schottky Barrier MOS Devices |
| 作者: | 黃調元 TIAO-YUANHUANG 國立交通大學電子工程學系 |
| 關鍵字: | 蕭特基能障;理論分析;金氧半導體元件;Schotty barrier;Theoretical analysis;MOS device |
| 公開日期: | 2001 |
| 官方說明文件#: | NSC90-2215-E009-079 |
| URI: | http://hdl.handle.net/11536/96696 https://www.grb.gov.tw/search/planDetail?id=665743&docId=126385 |
| Appears in Collections: | Research Plans |
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