標題: | 微奈米快速原型 Micro/Nano Rapid Prototype |
作者: | 洪紹剛 Hung Shao-Kang 國立交通大學機械工程學系(所) |
關鍵字: | 快速原型;原子力顯微術;浸筆微刻;光機電系統;rapid prototype;atomic force microscopy;dip-pen lithography;opto-mechatronics |
公開日期: | 2012 |
摘要: | 快速原型 (rapid prototype, RP) 是一種成熟的技術,廣泛地運用在各種產業。傳統 的快速原型機最好的橫向解析度約在數十微米。本計畫的目的是利用原子力顯微鏡 (atomic force microscopy, AFM) 為基礎的浸筆微刻法 (dip-pen lithography) 發展超高解 析度的三維快速原型技術,橫向解析度由原子力顯微鏡探針針尖 (~10nm) 決定。既有 的浸筆微刻法通常以化學方法結合基材與墨料,但無法堆疊墨料,故僅能製作單層二維 圖形。本計畫第一年專注在二維小面積的 (~5050 m2) 工作項目,追求橫向解析度的 極限。第二年專注在三維立體結構,探討不同的材料與結合方法實現多層疊合。第三年 的工作項目是大面積 (~5050 mm2) 立體結構製作,追求實際的應用價值,例如超細線 寬 (~20nm) 光罩與圖案化藍寶石基板 (pattern sapphire substrate, PSS)。 Rapid prototype (RP) is a mature technology and plays an important role in various industrials. The best resolution of a traditional RP machine is tens of micrometers. The purpose of this project is to develop an ultra high resolution 3-dimesional RP technology, which is based on atomic force microscopy (AFM) and dip-pen lithography. Its lateral resolution is determined by the tip size (~10nm) of an AFM probe. Traditional dip-pen lithography uses chemical methods to combine the substrate and the ink material, but the same chemical reaction can’t be applied between layers of ink material. Therefore, traditional dip-pen lithography can only fabricate single layer structure. In the first year, this project focuses on pushing the lateral resolution to limit. The working area is defined within 5050 m2 with a single layer structure. In the second year, the goal is to fabricate 3-dimesional structures. Various materials and combining methods will be surveyed in order to realize multi-layer stacking. In the third year, the working area is defined at 5050 mm2 with multi-layer structures. Real applications, such as thin-line (~20nm) photolithography mask and pattern sapphire substrate (PSS), will be chased. |
官方說明文件#: | NSC101-2221-E009-017 |
URI: | http://hdl.handle.net/11536/98225 https://www.grb.gov.tw/search/planDetail?id=2580885&docId=388575 |
Appears in Collections: | Research Plans |