Achieving saturation in vertical organic transistors for organic light-emitting diode driving by nanorod channel geometric control

Abstract

When conventional field-effect transistors with short channel length suffer from non-saturated output characteristics, this work proposed a vertical channel transistor to operate like a solid-state vacuum tube and exhibit good saturated curves. We utilized deep ultra-violet interference lithography to produce ordered grid-like metal to control the potential profile in vertical channel. We compared experimental and simulated characteristics to investigate the keys to achieve saturation. Finally, with an optimized design, a vertical organic transistor is used to drive a solution-processed white-light organic light-emitting diode to perform a luminescence control (0-260 cd/m(2)) with a 3.3-V base potential swing. (C) 2013 AIP Publishing LLC. [http://dx.doi.org/10.1063/1.4802999]