Skip to main content
Log In
Communities & Collections
All of DSpace
Statistics
Home
學術出版;;Publications
會議論文;;Conferences Paper
Characteristics of poly-Si nanowire transistors with multiple-gate configurations
Characteristics of poly-Si nanowire transistors with multiple-gate configurations
Loading...
Files
000256564900047.pdf
(1.18 MB)
Date
2008
Authors
Hsu, Hsing-Hui
Lin, Homg-Chih
Lee, Ko-Hui
Huang, Jian-Fu
Huang, Tiao-Yuan
Journal Title
Journal ISSN
Volume Title
Publisher
DOI
10.1109/VTSA.2008.4530818
Abstract
Description
Keywords
Citation
URI
http://dx.doi.org/10.1109/VTSA.2008.4530818
https://ir.lib.nycu.edu.tw/handle/11536/3408
Collections
會議論文;;Conferences Paper
Endorsement
Review
Supplemented By
Referenced By
Full item page