High-Performance Charge-Trapping Flash Memory Device With an Ultrathin 2.5-nm Equivalent-Si(3)N(4)-Thickness Trapping Layer

Abstract

We made the MoN-[SiO(2)-LaAlO(3)]-[Ge-HfON]-[LaAlO(3)-SiO(2)]-Si charge-trapping (CT) Flash device with a record-thinnest 2.5-nm equivalent-Si(3)N(4)-thickness trapping layer, a large 4.4-V initial memory window, a 3.2-V ten-year extrapolated retention window at 125 degrees C, and a 3.6-V endurance window at 106 cycles, under very fast 100 mu s and low +/- 16-V program/erase pulses. These were achieved using Ge reaction with a HfON trapping layer for better CT and retention.