Threshold Voltage Fluctuation in 16-nm-Gate FinFETs Induced by Random Work Function of Nanosized Metal Grain

Abstract

The random work-function (WK) induced threshold voltage fluctuation (sigma V-th) in 16 nm Titanium Nitride (TiN) metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigma V-th are considered in the proposed equation analytically. The formula accounts for the inside of fluctuation and could be used for the assessment of effectiveness of suppression techniques.