Original method of GaN and InGaN quantum dots formation on (0001)AlN surface by ammonia molecular beam epitaxy

Abstract

We report original method of formation Ga(In)N/AlN quantum dots with low density by ammonia MBE on the (0001)AlN surface by using a decomposition process of Ga(In)N thin layer. Low density of quantum dots have been obtained in the range 10(7)-10(9) cm(-2). Single quantum dots photoluminescence lines corresponding to exciton and biexciton transitions were observed in micro-photoluminescence spectra.