Influence of polymer dielectric surface energy on thin-film transistor performance of solution-processed triethylsilylethynyl anthradithiophene (TES-ADT)

Abstract

This study investigates the correlation between surface energy of polymer dielectrics and the film morphology, microstructure, and thin-film transistor performance of solution-processed 5,11-bis(triethylsilylethynyl) anthradithiophene (TES-ADT) films. The low surface energy polyimide (PI) dielectric induced large grains with strong X-ray reflections for spin-cast TES-ADT films in comparison to high surface energy poly(4-vinyl phenol) (PVP) dielectric. Furthermore, thin-film transistors based on spin-cast TES-ADT films on PI dielectric exhibited enhanced electrical performance, small hysteresis, and high stability under bias stress with carrier mobility as high as 0.43 cm(2)/Vs and a current on/off ratio of 10(7). (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim