High-Voltage nLDMOS in Waffle-Layout Style With Body-Injected Technique for ESD Protection

Abstract

Electrostatic-discharge robustness of n-channel lateral DMOS (nLDMOS) has been significantly Increased in this letter through the waffle-layout style with body-current Injection. This body-injected technique on high-voltage nLDMOS has been successfully verified in a 0.5-mu m 16-V bipolar CMOS DMOS process without additional process or mask modification. The TLP-measured results confirmed that the secondary breakdown current (I(t2)) of nLDMOS has a more than 2x increase by the body-current injection.