Investigation of the strained PMOS on (110) substrate

Abstract

This paper performed a detail study on the strained PMOS fabricated on the (I 10) Si substrate. We showed that in the (I 10) plane, the four-fold symmetry direction, <111(,)>, has the ideal band-structure features for the uniaxial-process-induced hole mobility enhancement. We then characterized the mobility and back scattering ratio of the (110)/<111(,)> PMOS with multiple process induced stressors.