A novel PHINES flash memory cell with low power program/erase, small pitch, two-bits-per-cell for data storage applications

Abstract

A novel programming by hot-hole injection nitride electron storage (PHINES) Flash memory technology is-developed. The memory bit size of 0.046 mu m(2) is fabricated based on 0.13-mu m technology. PHINES cell uses a nitride trapping storage cell structure. Fowler-Nordheim (FN) injection is performed to raise V-t in erase while programming is done by lowering a local V-t through hand-to-hand tunneling-induced hot hole (BTBT HH) injection. Two-bits-per-cell feasibility, low-power and high-speed program/erase, good endurance and data retentivity make it a promising candidate for Flash EEPROM technology in gigabit era applications.