A Single InN Nanopillar Photodetector with Extended Infrared Response Grown by MOCVD
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Abstract
An extended infrared photoresponse is observed in a high quality InN pillar/p-GaN photodetector with self-assembly epitaxy grown by LP-MOCVD. The IR portion photocurrent as high as 14.2% can be measured via AM1.5G solar simulated spectra.