Time-resolved spin filtering in semiconductor symmetric resonant barrier structures

Abstract

Spin-dependent tunneling in semiconductor symmetric double barrier structures is studied theoretically. Our calculation is based on the effective one-band Hamiltonian and Dresselhaus spin-orbit coupling. We demonstrate that the ratio of the tunneling times of electrons with opposite spin orientations can vary over a few orders in magnitude. The large and tunable ratio of the tunneling times can serve as the basis in the development of all-semiconductor dynamic spin filters. (c) 2005 American Institute of Physics.