Study of Band-Edge Modes in GaN-Based Photonic Crystal Surface-Emitting Lasers by the Multiple-Scattering Method

Abstract

In this paper, we have investigated the mode patterns in real space and reciprocal space, and threshold gain at different band edges in GaN-based photonic crystal surface-emitting lasers (PCSELs) by using the multiple-scattering method. The characteristics at each band edge (Gamma 1, K2, and M3) of PCSELs are simulated and discussed. In addition, GaN-based PCSELs operated at different band edges have been fabricated and measured. The experimental results of threshold show good agreement with the simulation results.