High performance 1.27 mu m InGaAs : Sb-GaAsP quantum wells vertical cavity surface emitting laser

Abstract

High performance 1.27 mum InGaAs:Sb-GaAsP vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior performance and temperature stability. The threshold current changes between 1.8 and 1.1 mA and the slope efficiency drops less than similar to30% when the temperature raised from room temperature to 70degreesC. High modulation bandwidth of 10.1 (8.8) GHz at 25degreesC (70degreesC) and bias current 6 mA are demonstrated.