La2O3/Si0.3Ge0.7 p-MOSFETs and Ni germano-silicide

Abstract

We have used Si0.3Ge0.7 to improve the hole mobility of La2O3 p-MOSFETs. A hole mobility of 55 cm(2)/V's in nitrided La2O3/Si0.3Ge0.7 p-MOSFET is measured and 1.8 times higher than the 31 cm(2)/V-s mobility in nitrided La2O3/Si control p-MOSFET. The Ni germano-silicide shows a low sheet resistance of 4-6 Omega/rectangle and small junction leakage currents of 3x10(-8) A/cm(2) and 2x10(-7) A/cm(2) for respective P+N and N+P junctions.