Analysis of influence of alkyl sources on deep levels in GaN by transient capacitance method

Abstract

The transient capacitance method nas used to analyze GaN samples grown by low-pressure organometallic vapor phase epitaxy (OMVPE) with triethylgallium (TEGa) or trimethylgallium (TMGa) as the alkyl source. Two deep levels at 1.10 and 1.27 eV were observed in the TMGa sample, while a deep level at 0.60 eV was observed in the TEGa sample. Using light illumination, levels deeper than those above were investigated in TEGa and TMGa samples.