Highly-Scaled 3.6-nm ENT Trapping Layer MONOS Device with Good Retention and Endurance

Abstract

Novel MONOS CTF, with record thinnest 3.6 nm ENT trapping layer, has a large 3.1 V 10-year extrapolated retention window at 125 degrees C and excellent 10(6) endurance at a fast 100 mu s and +/- 16 V program/erase. This is achieved using an As(+)-implanted higher. trapping layer with deep 5.1 eV work-function of As. In contrast, the un-implanted device only has a small 10-year retention window of 1.9 V at 125 degrees C.