Electrical Characteristics of HfO2 and La2O3 Gate Dielectrics for In0.53Ga0.47As MOS Structure
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10.1149/1.3206625
Abstract
InGaAs MOS capacitors with HfO2 and La2O3 gate dielectrics have been investigated. La2O3 capacitor was found to result in large leakage current. This can be attributed to the annealing-induced As diffusion into La2O3 layer from InGaAs substrate. This leakage current was found to be suppressed by inserting HfO2 layer between La2O3 layer and InGaAs.