Comment on 'Electron-phonon scattering in Sn-doped In(2)O(3) FET nanowires probed by temperature-dependent measurements'

Abstract

We point out that the recently reported electrical quantities and transport behavior in a Sn-doped indium oxide FET nanowire (Berengue et al 2009 Nanotechnology 20 245706) should require serious reevaluation.