Bonding line-patterned In0.5Ga0.5P layer on GaP substrate for the successive growth of high-brightness LED structures

Abstract

The heteroeptixial integration of the III-V semiconductor compound, which was limited by lattice mismatch, can now be accomplished by using the wafer bonding process. In this study, a line-patterned In0.5Ga0.5P layer was successfully transferred to the GaP wafer through the wafer bonding process for the successive growth of high-brightness light-emitting diode (LED) structures. (C) 2004 The Electrochemical Society.