Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

Abstract

A hybrid cascaded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascade circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96V boost converter is used to evaluate the benefit of GaN cascade switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit. (C) 2015 Elsevier B.V. All rights reserved.