Single-crystalline delta-Ni2Si nanowires with excellent physical properties
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10.1186/1556-276X-8-290
Abstract
In this article, we report the synthesis of single-crystalline nickel silicide nanowires (NWs) via chemical vapor deposition method using NiCl2 center dot 6H(2)O as a single-source precursor. Various morphologies of delta-Ni2Si NWs were successfully acquired by controlling the growth conditions. The growth mechanism of the delta-Ni2Si NWs was thoroughly discussed and identified with microscopy studies. Field emission measurements show a low turn-on field (4.12 V/mu m), and magnetic property measurements show a classic ferromagnetic characteristic, which demonstrates promising potential applications for field emitters, magnetic storage, and biological cell separation.