Efficiency Droop Reduction in InGaN/GaN Light-emitting Diodes by Graded-thickness Multiple Quantum Wells

Abstract

InGaN/GaN LED with graded-thickness MQWs has superior hole and radiative recombination distribution by simulation modeling, and electroluminescence spectrum reveals additional emission from the narrower wells. Output power and efficiency droop behavior are both improved. (C) 2010 Optical Society of America