LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM ORGANOPOLYSILANES

Abstract

(Me3Si)2SiMe2, (Me3Si)3SiMe and (Me3Si)4Si were used as precursors for the deposition of polycrystalline beta-SiC thin films on silicon substrates at 1000-1200-degrees-C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.