STRUCTURAL EFFECT ON BAND-TRAP-BAND TUNNELING INDUCED DRAIN LEAKAGE IN N-MOSFETS

Abstract

The structural dependence of the hot carrier stress incurred drain leakage current via band-trap-band tunneling in off-state has been modeled and characterized in conventional S/D, DDD, and LDD n-MOSFET structures, The results shows that lateral field enhanced band-trap-band tunneling is primarily responsible for an increased drain leakage current after hot carrier stress in LDD structures while vertical field induced tunneling is dominant in conventional S/D and DDD structures.