Copper direct bonding with short time and excellent electrical property by < 111 >-oriented nano-twinned copper

Abstract

In order to be compatible with semiconductor manufacturing, nanotwinned Cu microbumps were fabricated on 8 '' wafers. The pair of top and bottom dies were jointed through thermal compression bonding. After 1 min bonding time, the resistance could obtaine from all test structures, which indicates all the microbumps were bonded in the short time successfully.