Structure of high resistivity GaAs film grown by low-temperature metalorganic chemical vapor deposition

Abstract

The structure of a low-temperature GaAs layer grown by low-pressure metalorganic chemical vapor deposition with precursors of triethylgallium and arsine is reported. Dense particles containing Ga clusters are found in a high resistivity GaAs film grown at 420 degrees C, The size and concentration of particles are about 800-1000 nm and 7X10(11) cm(-3), respectively. (C) 1996 American Institute of Physics.