Low Voltage and Low power UWB CMOS LNA using Current-Reused and Forward Body Biasing Techniques

Abstract

A ultra-wideband (UWB) low noise amplifier (LNA) was designed and fabricated in 0.18 mu m CMOS technology. The successful integration of current-reused and forward body biasing (FBB) techniques in a cascade amplifier can enable an aggressive scaling of the supply voltages, V-DD and V-G1 to 1.0V and 0.53V. The low voltage feature from FBB leads to more than 50% saving of power dissipation to 5.2mW. The measured power gain (S-21) can reach 10.55 similar to 12.6dB and noise figure (NF50) is 3.2 similar to 3.95 dB through the UWB (3 similar to 10.5GHz). This UWB LNA with small chip area (0.69mm(2)) provides a solution of low voltages, low power, and low cost.