Gate oxide integrity of thermal oxide grown on high temperature formed Si0.3Ge0.7

Abstract

We have investigated the gate oxide integrity of thermal oxides direct grown on high temperature formed Si0.3Ge0.7 Good oxide integrity is evidenced by the low interface-trap density of 5.9 x 10(10) eV(-1)cm(-2), low oxide charge density of -5.6 x 10(10) cm(-2), and the small stress-induced leakage current after -3.3 V stress for 10 000 s, The good gate oxide integrity is due to the high temperature formed and strain-relaxed Si0.3Ge0.7 that has a original smooth surface and stable after subsequent high temperature process.