InAs high electron mobility transistors with buried gate for ultralow-power-consumption low-noise amplifier application

Abstract

An InAs/In(0.3)As composite channel high-electron-mobility transistor (HEMT) fabricated using the gate sinking technique was realized for ultralow-power-consumption low-noise application. The device has a very high transconductance of 100 mS/mm at at drain voltage of 0.5 V. The saturated drain-Source current of the device is 1066 mA/mm. A current grin cutoff frequency (f(T)) of 113 GHz and a maximum oscillation frequency (f(max)) of 110GHz were achieved at only drain bias volume V(ds) = 0.1V. The 0.08 x 40 mu m(2) device demonstrated a minimum noise figure of 0.82 dB and a 14 dB associated gain at 17GHz with 1.14mW DC power consumption.