Bistable resistive switching in Al2O3 memory thin films

Abstract

In this study, we investigate the resistive switching behavior of radio frequency (rf)-sputtered Al2O3 thin films. It is observed that both high-conducting state (ON state) and low-conducting state (OFF state) are stable and reproducible during successive resistive switchings by dc voltage sweeping. The ratio of resistance of the ON and OFF state is over 10(3). Such a reproducible resistive switching can be performed at 150 degrees C, and the resistance of the ON state can be altered by various current compliances. The conduction mechanisms of the ON and OFF states are demonstrated as ohmic conduction and Frenkel-Poole emission, respectively. Both states, performed by dc voltage sweeping and applying short pulse, are stable over 10(4) s at a read voltage of 0.3 V and the electrical-pulse-induced resistance change (EPIR) phenomenon is demonstrated, which are all important properties for further resistive random access memory application. (c) 2007 The Electrochemical Society.