Improved stress reliability of analog TiHfO metal-insulator-metal capacitors using high-work-function electrode

Abstract

We have studied the reliability of high-K (K similar to 49) TixHf1-xO (x similar to 0.67) metal-insulator-metal (MIM) capacitors after constant voltage stress induction. The use of a high-work-function Ni top electrode improves not only the leakage current, and temperature- and voltage-coefficients of capacitance, but also the long-term capacitance variation after stress induction.