A 290-GHz CMOS Heterodyne Integrated Imager

Abstract

A 290-GHz heterodyne integrated imager has been developed in a 65-nm CMOS technology. The imager consists of a mixer, an LO (local oscillator), an IF amplifier, and an IF detector. A responsivity of 20 kV/W and a noise equivalent power (NEP) of 29 pW/Hz(1/2) were measured. Images were successfully acquired with an image acquisition setup that employs the fabricated imager circuit.