Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: reply
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10.1364/OE.26.00A110
Abstract
We present some comments to the paper "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment" [Opt. Express 22, A1589 (2014)]. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement