10-Gb/s modulator drivers with local feedback networks

Abstract

A novel intrinsic collector-base capacitance (C(CB)) feedback network (ICBCFN) was incorporated into the conventional cascode and series-connected voltage balancing (SCVB) circuit configurations to implement 10-Gb/s modulator drivers. The drivers fabricated in 0.35-mu m SiGe BiCMOS process could generate 9 V(PP) differential output swings with rise/fall time of less than 29 ps. Also, the ICBCFN was modified as an intrinsic drain-gate capacitance feedback network (IDGCFN) to implement drivers with differential output swing of 8 V(PP) in 0.18-mu m CMOS process. The power consumption is as low as 0.6 W. The present work shows that the driving capability is greater than that of the currently reported Silicon-based drivers.