A new evaluation method of the threshold voltage for a low temperature poly-silicon thin film transistor in a source follower configuration

Abstract

A new evaluation method of the output voltage for the source follower composed of a LTPS TFT is proposed. This method provides an effective and more precise description about the unsaturated output voltage behaviour of the source follower with a LTPS TFT. A new interpretation of the threshold voltage of LTPS TFT is also provided.