P-type tin-oxide thin film transistors for blue-light detection application

Abstract

We reported the characteristics of p-type tin-oxide (SnO) thin film transistors (TFTs) upon illumination with visible light. Our p-type TFT device using the SnO film as the active channel layer exhibits high sensitivity toward the blue-light with a high light/dark read current ratio (I-light/I-dark) of 8.2 x 10(3) at a very low driven voltage of < 3 V. Since sensing of blue-light radiation is very critical to our eyes, the proposed p-type SnO TFTs with high sensitivity toward the blue-light show great potential for future blue-light detection applications. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim