Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retention

Abstract

Using the strong trapping capability of novel AlN (kappa=10), low voltage drop in high-kappa layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(K=17)/IrO2 device shows good 85 degrees C memory integrity of fast 100 is erase, large 3.7V Delta V-th and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V Delta V-th and 3.4V for 85 degrees C 10-year retention at 1 ms erase.