Reliable Doping Technique for WSe2 by W: Ta Co-Sputtering Process

Abstract

The electrical and material properties of WSe2 doped by W:Ta co-sputtering process were examined. High acceptor doping concentration (6x10(13)cm(-2)) and good effective hole mobility (16.5cm(2)/Vs) were realized. As a result, low sheet resistance (17k Omega/sq) and contact resistance with Pd metal (11.4k Omega-mu m) were measured using TLM structures.