Low-K/Cu CMOS-based SoC technology with 115-GHz f(T), 100-GHz f(max), noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor

Abstract

Logic CMOS-based RF technology is introduced for a 10-Gb transceiver in which active and passive RF devices have been realized in a single chip. RF nMOS of 115-GHz f(T), 100-GHz f(max), and sub-1.0-dB NFmin at 10 GHz have been fabricated by aggressive device scaling and layout optimization. High-Q MiM capacitor and spiral Cu inductors have been successfully implemented in the same chip by 0.13-mu m low-K/Cu back end of integration line technology. Core 1.0 V MOS and/or junction varactors for VCO at 10 GHz are offerings free of extra cost and realized by the elaborated layout.