Achieving High Field-Effect Mobility in Amorphous Indium-Gallium-Zinc Oxide by Capping a Strong Reduction Layer

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000305943900007.pdf (692.62 KB)

Date

Authors

Yeh, Chun-Cheng

Tsai, Chuang-Chuang

Chen, Liang-Hao

Keywords

high mobility , oxide semiconductors , thin film transistors , defect reduction , oxygen deficiency

URI

https://ir.lib.nycu.edu.tw/handle/11536/16435

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期刊論文;;Articles