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New On-Chip Transient Detection Circuit to Improve Electromagnetic Susceptibility of Microelectronic Systems

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A new on-chip transient detection circuit for system-level electrostatic discharge (ESD) protection is presented in this work. The circuit simulation and experimental results with silicon testchip in a 0.18-mu m CMOS process have continued that the new proposed circuit can successfully detect the occurrence of system-level ESD-induced electrical transient disturbance. The detection output can be used as system recovery index to restore the system from frozen or upset state to a stable and known state. Therefore, the immunity of microelectronic products against the system-level ESD test can be effectively enhanced.

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