A physics-based transit time model for GaInP/GaAs HBT devices

Abstract

A compact physics-based transit time model has been established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit time frequency versus bias (I(C), V(CE)) especially at low and medium current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit time frequency versus bias (I(C), V(CE)) more precisely. This model has obvious advantage over the VBIC model to show the relation between the f(t) versus bias (I(C), V(CE)) in the low and medium current regimes for GaInP/GaAs HBT devices.