Enhanced Carrier-Mobility-Fluctuation Origin Low-Frequency Noise in Uniaxial Strained PMOSFETs

Abstract

This letter reports our new findings on the impact of uniaxial strain on the low-frequency-noise characteristics in nanoscale PMOSFETs. It is found that the normalized drain current noise of the strained device in the high-gate-overdrive (V(gst)) regime is larger than its control counterpart. In addition, the enhanced carrier-mobility- fluctuation origin 1/f noise for the strained device in the high-vertical bar V(gst)vertical bar regime indicates that the carrier mobility in the strained device is more phonon limited, which represents an intrinsic strain effect on the low-frequency noise.