深次微米T型閘極金氧半電晶體之研製

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882215E009030.pdf (561.62 KB)

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金氧半場效電晶體, 窄線寬效應, 橋接效應, 深次微米, MOSFET, Narrow line-width effect, Bridging effect, Deep submicrometer

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https://www.grb.gov.tw/search/planDetail?id=418076&docId=74161
https://ir.lib.nycu.edu.tw/handle/11536/94236

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