Skip to main content
Log In
Communities & Collections
All of DSpace
Statistics
Home
學術出版;;Publications
期刊論文;;Articles
BREAKDOWN-INITIATED NEGATIVE-RESISTANCE DEVICE WITH MOST-TRANSISTOR STRUCTURE
BREAKDOWN-INITIATED NEGATIVE-RESISTANCE DEVICE WITH MOST-TRANSISTOR STRUCTURE
Loading...
Date
1979
Authors
YU, GJ
TSAI, C
YU, SY
Journal Title
Journal ISSN
Volume Title
Publisher
DOI
10.1063/1.325734
Abstract
Description
Keywords
Citation
URI
http://dx.doi.org/10.1063/1.325734
https://ir.lib.nycu.edu.tw/handle/11536/5082
Collections
期刊論文;;Articles
Endorsement
Review
Supplemented By
Referenced By
Full item page